Search results for "Schottky effect"
showing 4 items of 4 documents
Shape memory NiTi thin films deposited at low temperature
1999
Abstract NiTi shape memory alloy (SMA) thin films have the potential to become high performance actuators for micro-electromechanical systems. Low temperature crystallized NiTi films would ensure a good compatibility with microelectronic processes and polymers. To avoid the drawbacks induced by annealing, we have tried to obtain low temperature crystallized RF sputtered NiTi films by optimising deposition parameters. We have found that NiTi films containing an excess of Ti (∼52%) were crystallized when deposited on Si(100) substrates heated up to only 473 K. NiTi/Si(n) Schottky diodes I–V characteristics showed a temperature dependence indicating structural transition in the NiTi electrode.…
<title>Changes in the temperature dependence of the dielectric constant in irradiated antiferroelectric thin films</title>
2003
A model describing the changes of the Curie-Weiss temperature in lead-zirconate thin films under neutron irradiation is proposed. The Curie-Weiss temperature in the irradiated material decreases which is connected to charges caused by neutron irradiation. The charges located near the surfaces due to Schottky effect and in the bulk of the film results in different rates of the Curie-Weiss temperature decreases with neutron fluence. However the influence of the Schottky layers seems to be more pronounced. Satisfactory agreement between the theoretical results and the experimental data is obtained for different neutron fluences.© (2003) COPYRIGHT SPIE--The International Society for Optical Eng…
Efficient electronic cooling in heavily doped silicon by quasiparticle tunneling
2001
Cooling of electrons in a heavily doped silicon by quasiparticle tunneling using a superconductor–semiconductor–superconductor double-Schottky-junction structure is demonstrated at low temperatures. In this work, we use Al as the superconductor and thin silicon-on-insulator (SOI) film as the semiconductor. The electron–phonon coupling is measured for the SOI film and the low value of the coupling is shown to be the origin of the observed significant cooling effect.
Performances of the Alpha-X RF gun on the PHIL accelerator at LAL
2015
International audience; The Alpha-X RF-gun was designed to produce an ultra-short (<100 fs rms), 100 pC and 6.3 MeV electron beam with a normalized rms transverse emittance of 1π mm mrad for a gun peak accelerating field of 100 MV/m. Such beams will be required by the Alpha-X project, which aims to study a laser-driven plasma accelerator with a short wavelength accelerating medium. It has been demonstrated on PHIL (Photo-Injector at LAL) that the coaxial RF coupling, chosen to preserve the gun field cylindrical symmetry, is perfectly understood and allows reaching the required peak accelerating field of 100 MV/m giving beam energy of 6.3 MeV. Moreover, a quite low beam rms relative energy s…